Yan, H., Du, Y., Luo, P. et al. (2 more authors) (2021) Analytical modeling of sheet carrier density and ON-resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices, 68 (11). pp. 5714-5719. ISSN 0018-9383
Abstract
In this article, we report on the analysis of the on-state behavior of polarization super-junction (PSJ) heterojunction field-effect transistors (HFETs). Theoretical models for calculating the sheet densities of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) are proposed and calibrated with numerical simulations and experimental results. To calculate the area-specific on-state resistance ( R(on,sp) ) of PSJ HFETs, ohmic gate (OG) structures are considered herein. The calculated results are well fit with the simulated and measured results at different PSJ length ( LPSJ ) conditions at room temperature.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 29 Sep 2021 11:43 |
Last Modified: | 01 Oct 2022 00:25 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/TED.2021.3115091 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:178389 |