Taylor-Mew, J., Shulyak, V., White, B. et al. (2 more authors) (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33 (20). pp. 1155-1158. ISSN 1041-1135
Abstract
Avalanche photodiodes (APDs) are used in optical receivers of high-speed optical communication systems to improve signal-to-noise ratio over conventional photodiodes. Low excess noise characteristics are crucial for APDs to preserve the benefits associated with high internal gains. In this work, we presented room temperature data of avalanche gain and excess noise factors of Al 0.85 Ga 0.15 As 0.56 Sb 0.44 APDs using pure and mixed carrier injection profiles. Using pure electron injection, the best possible excess noise performance for a given avalanche width was measured with an excess noise factor < 2 for gains up to 25. This is the lowest excess noise reported for this material system at high gain. Two other injection profiles with increased portion of injected holes worsened the excess noise performance, confirming the need to use pure electron injection for the best possible APD noise performance.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | Avalanche photodiodes; impact ionization; excess noise |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number PHLUX TECHNOLOGY LTD UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 17 Sep 2021 09:09 |
Last Modified: | 03 Sep 2022 00:13 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/lpt.2021.3110123 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:178300 |