Frost, William James orcid.org/0000-0001-5249-1006, Elphick, Kelvin, Samiepour, Marjan et al. (1 more author) (2021) Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation. Scientific Reports. 17382. ISSN 2045-2322
Abstract
The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © The Author(s) 2021 |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 18 Aug 2021 14:40 |
Last Modified: | 20 Dec 2024 00:20 |
Published Version: | https://doi.org/10.1038/s41598-021-96706-9 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1038/s41598-021-96706-9 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:177235 |