Poluri, N., Venkatesan, N., De Souza, M.M. orcid.org/0000-0002-7804-7154 et al. (1 more author) (2021) Influence of a graded channel HEMT on the performance of Class BJF-1 amplifiers for 5G applications. In: Conference Booklet WOCSDICE '21. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 21-22 Jun 2021, Bristol, UK (online).
Abstract
We explore the benefits of continuum mode amplifier design using a graded GaN HEMT structure operating at a low drain bias of 5V to meet requirements of efficiency, linearity and bandwidth in 5G mobile networks. A significant increase in the available design space for high-efficiency is observed in the graded-channel device when compared to a conventional GaN HEMT, revealing the advantages of broad bandwidth, over and above improvement of 20-30 dB in linearity due to the intrinsic flat transconductance and linear gate capacitance characteristics of the graded device.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 The Author(s). For re-use permissions please contact the Author(s). |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Innovate UK (TSB) 600721 PARSIMO-270687-2 Global Invacom Ltd n/a |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 10 Sep 2021 06:32 |
Last Modified: | 10 Sep 2021 13:59 |
Status: | Published |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:177218 |