Nawa, K, Kepaptsoglou, D, Ghasemi, A et al. (10 more authors) (2021) Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface. Physical Review Materials, 5 (2). 024203. ISSN 2475-9953
Abstract
We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 American Physical Society. This is an author produced version of a journal article published in Physical Review Materials. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 17 Jun 2021 13:54 |
Last Modified: | 17 Jun 2021 13:54 |
Status: | Published |
Publisher: | American Physical Society (APS) |
Identification Number: | 10.1103/physrevmaterials.5.024203 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:175317 |