Avrutin, Evgeny orcid.org/0000-0001-5488-3222, ryvkin, boris and Kostamovaara, Juha Tapio (2021) AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission. Iet optoelectronics. ISSN 1751-8768
Abstract
It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (< 0.9 m, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically << 100 ns. The dependences of the laser performance on the thickness of the active layer and the cavity length are analysed. It is shown that the relatively thick bulk active layer allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021. The Author(s). |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 14 Apr 2021 11:30 |
Last Modified: | 22 Jan 2025 00:16 |
Published Version: | https://doi.org/10.1049/ote2.12033 |
Status: | Published online |
Refereed: | Yes |
Identification Number: | 10.1049/ote2.12033 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:173093 |