Bentley, Phillip, Bird, Toby, Graham, Aaron et al. (3 more authors) (2021) Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium. RSC Advances. 025314. ISSN 2046-2069
Abstract
Activation of the carbon buffer layer on 4H- and 6H-SiC substrates using elements with high magnetic moments may lead to novel graphene/SiC-based spintronic devices. In this work, we use a variety of surface analysis techniques to explore the intercalation of Er underneath the buffer layer showing evidence for the associated formation of quasi-free-standing graphene (QFSG). A combined analysis of low energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), and metastable de-excitation spectroscopy (MDS) data reveals that annealing at temperatures up to 1073 K leads to deposited Er clustering at the surface. The data suggest that intercalation of Er occurs at 1273 K leading to the breaking of back-bonds between the carbon buffer layer and the underlying SiC substrate and the formation of QFSG. Further annealing at 1473 K does not lead to the desorption of Er atoms but does result in further graphitization of the surface.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 Author(s). |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 17 Mar 2021 09:30 |
Last Modified: | 03 Nov 2024 01:26 |
Published Version: | https://doi.org/10.1063/9.0000154 |
Status: | Published online |
Refereed: | Yes |
Identification Number: | 10.1063/9.0000154 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:172268 |
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Description: Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
Licence: CC-BY 2.5