Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Nawawi, M.R.M. et al. (3 more authors) (2021) Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour. Journal of Physics D: Applied Physics, 54 (19). 195102. ISSN 0022-3727
Abstract
The dark current characteristics of two series of bulk GaAsBi p-i-n diodes are analysed as functions of temperature and band gap. Each temperature dependent measurement indicates that recombination current dominates in these devices. The band gap dependence of the dark currents is also consistent with recombination dominated current for the devices grown at a common growth temperature, indicating that the presence of Bi does not directly adversely affect the dark currents. However, the devices grown at different growth temperatures exhibit a faster increase in dark current with decreasing device band gap, suggesting that a reduced growth temperature causes a reduction in minority carrier lifetime.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | GaAsBi; devices; diodes; highly mismatched alloys; molecular beam epitaxy; temperature dependence |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/S036792/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Mar 2021 13:59 |
Last Modified: | 15 Mar 2021 13:59 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/abe4ff |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:171783 |