Harrison, P. and Kelsall, R.W. (1997) Population inversion in optically pumped asymmetric quantum well terahertz lasers. Journal of Applied Physics, 81 (11). pp. 7135-7140. ISSN 1089-7550
Abstract
Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga(1 – x)Al(x)As quantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation. © 1997 American Institute of Physics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Copyright © 1997 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Repository Officer |
Date Deposited: | 01 Nov 2006 |
Last Modified: | 26 Oct 2016 12:18 |
Published Version: | http://dx.doi.org/10.1063/1.365310 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.365310 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:1676 |