Whitaker, M.D.C., Lioliou, G., Krysa, A.B. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2020) InGaAs x-ray photodiode for spectroscopy. Materials Research Express, 7 (10). 105901. ISSN 2053-1591
Abstract
A prototype In0.53Ga0.47As p+-i-n+ x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an x-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (−40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting x-ray detection.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 The Author(s). Published by IOP Publishing Ltd. Article made available under the terms of the Creative Commons Attribution 4.0 licence. (http://creativecommons.org/licenses/by/4.0) |
Keywords: | InGaAs; GaInAs; x-ray detector; Photodiode; Spectroscopy |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 20 Oct 2020 11:21 |
Last Modified: | 20 Oct 2020 11:21 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/2053-1591/abbaf9 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:166586 |
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