Shulyak, V., Hayat, M.M. and Ng, J.S. orcid.org/0000-0002-1064-0410 (2020) Sensitivity calculations of high-speed optical receivers based on electron-APDs. Journal of Lightwave Technology, 38 (4). pp. 989-995. ISSN 0733-8724
Abstract
Sensitivity of high-speed optical receivers is heavily influenced by the performance of the optical detectors used in the receivers, the data rate, and the target bit-error-rate (BER). A simulation model for sensitivity of optical receivers based on electron-avalanche photodiodes (e-APDs) is presented. It allows for the optimization of avalanche width and operating voltage to achieve the optimum receiver sensitivity for given bit rate and target BER. The effects modelled include inter-symbol interference (ISI), various dark current components (tunnelling, diffusion, and generation), current impulse duration, avalanche gain, and amplifier's noise. The model was demonstrated through simulations of Indium Arsenide (InAs) e-APDs. For 10 -12 target BER, the receiver's sensitivities were found to be -30.6, -22.7, -19.2, and -16.6 dBm, for 10, 25, 40, and 50 Gb/s data rate, respectively. Desirable avalanche properties of InAs e-APDs are counteracted by detrimental effects of high dark currents. Hence InAs e-APDs with lower dark currents are required to be more competitive with other optical detector technologies for high-speed optical receivers. The data reported in this article is available from the ORDA digital repository (DOI: 10.15131/shef.data.9959468).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ |
Keywords: | Avalanche photodiodes (APDs); bit-error rate (BER); dead space; impact ionization; indium Arsenide (InAs); intersymbol interference (ISI); noise; receiver sensitivity |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 14 Jul 2020 16:36 |
Last Modified: | 14 Jul 2020 16:36 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/jlt.2019.2950804 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:163253 |