Luo, P., Madathil, S. orcid.org/0000-0001-6832-1300, Nishizawa, S. et al. (1 more author) (2020) Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices. IEEE Transactions on Electron Devices, 67 (9). pp. 3691-3697. ISSN 0018-9383
Abstract
It is well known that Dynamic Avalanche (DA) phenomenon poses fundamental limits on the power density, turnoff power loss, dV/dt controllability and long-term reliability of MOS-bipolar devices. Therefore, overcoming this phenomenon is essential to improve energy efficiency and ensure their safe operation. In this work, detailed analysis of 1.2 kV MOS-Bipolar devices are undertaken through both calibrated TCAD simulations and experiments to show the fundamental cause of DA and the impact of current density, supply voltage as well as 3D scaling rules on the DA performance. Furthermore, the dynamic avalanche performance of a 1.2 kV NPT Trench Clustered IGBT is evaluated for high current density and low power loss operations. The results indicate that this device configuration is free of DA and can be used for ultra-high current density operation in an energy efficient manner.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | Clustered insulated gate bipolar transistor (CIGBT); dV/dt controllability; dynamic avalanche (DA); energy efficiency; high current density operation; IGBT; power density |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 06 Jul 2020 13:48 |
Last Modified: | 20 Jan 2022 08:26 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/TED.2020.3007594 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:162876 |