Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation

We have performed a detailed investigation into the inter-subband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electron-like subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electron-like states that should be localised within the InAs layer.