Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano, 14 (6). pp. 6906-6911. ISSN 1936-0851
Abstract
Augmented reality and visual reality (AR and VR) microdisplays require micro light emitting diodes (μLEDs) with an ultrasmall dimension (≤5 μm), high external quantum efficiency (EQE), and narrow spectral line width. Unfortunately, dry etching which is the most crucial step for the fabrication of μLEDs in current approaches introduces severe damages, which seem to become an insurmountable challenge for achieving ultrasmall μLEDs with high EQE. Furthermore, it is well-known that μLEDs which require InGaN layers as an emitting region naturally exhibit significantly broad spectral line width, which becomes increasingly severe toward long wavelengths such as green. In this paper, we have reported a combination of our selective overgrowth approach developed very recently and epitaxial lattice-matched distributed Bragg reflectors (DBRs) embedded in order to address all these fundamental issues. As a result, our μLEDs with a diameter of 3.6 μm and an interpitch of 2 μm exhibit an ultrahigh EQE of 9% at ∼500 nm. More importantly, the spectral line width of our μLEDs has been significantly reduced down to 25 nm, the narrowest value reported so far for III-nitride green μLEDs.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. (https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) |
Keywords: | μLEDs; selective overgrowth; InGaN/GaN; distributed Bragg reflector; external quantum efficiency; dry-etching |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/M015181/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/P006361/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/P006973/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Jun 2020 16:19 |
Last Modified: | 16 Nov 2021 13:50 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Refereed: | Yes |
Identification Number: | 10.1021/acsnano.0c01180 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:161379 |