Gate-Tunable Reversible Rashba−Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

Li, Lijun, Zhang, Jin, Myeong, Gyuho et al. (11 more authors) (2020) Gate-Tunable Reversible Rashba−Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature. ACS Nano. pp. 5251-5259. ISSN 1936-0851

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Item Type: Article
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© 2020 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

Keywords: graphene,2D materials,edelstein effect,Rashba edelstein effect,spin galvanic effect,spintronics
Dates:
  • Published: 26 May 2020
  • Published (online): 8 April 2020
  • Accepted: 8 April 2020
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
Funding Information:
Funder
Grant number
THE ROYAL SOCIETY
URF\R\191021
Depositing User: Pure (York)
Date Deposited: 06 May 2020 08:50
Last Modified: 16 Oct 2024 16:34
Published Version: https://doi.org/10.1021/acsnano.0c01037
Status: Published
Refereed: Yes
Identification Number: 10.1021/acsnano.0c01037
Open Archives Initiative ID (OAI ID):

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