Albrecht, M., Grillo, V., Borysiuk, J. et al. (8 more authors) (2001) Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy. In: Cullis, A.G. and Hutchison, J.L., (eds.) Microscopy of Semiconducting Materials 2001. The 12th Conference on the Microscopy of Semiconducting Materials (MSM), 25-29 Mar 2001, Oxford, UK. IOP Publishing Ltd (print) / CRC Press (eBook) , pp. 267-272. ISBN 9781351074629
Abstract
We use structural and analytical transmission electron microscopy to study the scale on which InGaN alloy fluctuations influence the optical properties of InGaN quantum wells. We show that compositional and layer thickness fluctuations can be present in InGaN thin layers, depending on the growth conditions and In concentrations. Spectrally and spatially resolved cathodoluminescence performed in the transmission electron microscope indicates that the optical properties of InGaN quantum wells depend on short range order on an atomic scale rather than on medium-range clustering due to lateral segregation.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2001 IOP Publishing Ltd. |
Keywords: | localized excitons; band-gap; recombination; interfaces; alloys; images |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 30 Apr 2020 08:01 |
Last Modified: | 30 Apr 2020 08:01 |
Published Version: | https://www.taylorfrancis.com/books/e/978135107462... |
Status: | Published |
Publisher: | IOP Publishing Ltd (print) / CRC Press (eBook) |
Refereed: | Yes |
Identification Number: | 10.1201/9781351074629 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:160075 |