Kamil, SA, Chandrappan, J, Krauss, TF et al. (1 more author) (2019) Ultrafast laser plasma doping of Er3+ in Si3N4-on-silicon. Journal of Optoelectronics and Advanced Materials, 21 (11-12). pp. 710-716. ISSN 1454-4164
Abstract
An ultrafast laser plasma doping (ULPD) technique is used to dope Er3+ into silicon nitride (Si3N4)-on-silicon substrate. An adjustable refractive index (1.9-2.9) makes silicon nitride a highly suitable candidate for erbium-doped waveguide amplifier (EDWA) applications. The resultant layers consist of a mixture of target glass with Si3N4 and the structural and optical properties are varied according to fs-laser energy used. The use of higher fs-laser energy caused the formation of a thicker doped layer on Si3N4, predominantly with target material elements. However, surface doped layers were rougher when higher fs-laser energies were used. The doped layer exhibits spectroscopic characteristics of erbium with photoluminescence lifetimes varying from 3.95 to 9.59 ms..
Metadata
Item Type: | Article |
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Authors/Creators: |
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Keywords: | Ultrafast lasers; Laser ablation; Optical materials; Er3+-doped glasses |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) |
Funding Information: | Funder Grant number EPSRC (Engineering and Physical Sciences Research Council) EP/M015165/1 |
Depositing User: | Symplectic Publications |
Date Deposited: | 28 Apr 2020 14:25 |
Last Modified: | 28 Apr 2020 14:25 |
Published Version: | https://joam.inoe.ro/articles/ultrafast-laser-plas... |
Status: | Published |
Publisher: | INOE |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:159913 |