Julsgaard, B, von den Driesch, N, Tidemand-Lichtenberg, P et al. (3 more authors) (2020) Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy. Photonics Research. ISSN 2327-9125
Abstract
We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon energies in the range of 0.51 eV to 0.56 eV with an instrument time response of 75 ps. The detection system is based on optical parametric three-wave mixing, operates at room temperature, has spectral resolving power, and is shown to be well-suited for investigating dynamical processes in germanium-tin alloys. In particular, the carrier lifetime of a direct-bandgap Ge1−xSnx film with concentration x = 12.5 % and biaxial strain −0.55 % is determined to be 217 ± 15 ps at a temperature of 20 K. A room-temperature investigation indicates that the variation in this lifetime with temperature is very modest. The characteristics of the photoluminescence as a function of pump fluence are discussed.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 Chinese Laser Press. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 23 Mar 2020 15:57 |
Last Modified: | 21 Apr 2021 13:42 |
Status: | Published online |
Publisher: | Optical Society of America |
Identification Number: | 10.1364/prj.385096 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:158614 |