Jiang, S., Cai, Y., Feng, P. et al. (6 more authors) (2020) Exploring an approach toward the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces, 12 (11). pp. 12949-12954. ISSN 1944-8244
Abstract
To fully exploit the advantages of GaN for electronic devices, a critical electric field which approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach towards the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high temperature AlN buffer technology which is different from the classic two-step growth approach, our high electron mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent figure-of-merit (Vbr2/Ron,sp) of 5.13 × 108 V2/Ω·cm2.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, (https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. |
Keywords: | GaN; breakdown voltage; critical electric field; HEMTs; leakage current; 2DEG; electronics; MOVPE growth |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Science Research Council EP/M015181/1; EP/P006973/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 04 Mar 2020 10:36 |
Last Modified: | 03 Dec 2021 14:41 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Refereed: | Yes |
Identification Number: | 10.1021/acsami.9b19697 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:158040 |