Elbaz, A, von den Driesch, N, Pantzas, K et al. (12 more authors) (2019) Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities. In: Proceedings of 2019 IEEE 16th International Conference on Group IV Photonics (GFP). 2019 IEEE 16th International Conference on Group IV Photonics (GFP), 28-30 Aug 2019, Singapore. IEEE ISBN 978-1-7281-0905-3
Abstract
GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. These past few years the research were consequently focused on incorporating the highest Sn content as possible to achieve high directness and high temperature laser operation. This unfortunately results is increased threshold. In this contribution we discuss the advantages in combining tensile strain engineering with lower Sn content alloys. This approach is motivated by the higher material quality in lower Sn content. The case with Sn content as small as 5.4 at.% Sn will be discussed. The alloy is initially compressively strained, and exhibits an indirect band gap that is turned to direct by applying tensile strain. A specific technology based on transfer On Insulator stressor layer on metal was developed to address strain engineering, thermal cooling and defective interface with the Ge-VS. This led to lasing in Ge0.95Sn0.05 microdisk cavities with dramatically reduced thresholds, by two order of magnitude, as compared to the case with high Sn alloys and as consequence enables cw operation.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2019 IEEE. This is an author produced version of a paper published in Proceedings of 2019 IEEE 16th International Conference on Group IV Photonics (GFP). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | GeSn laser; tensile strain; cw and pulse lasing |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 18 Feb 2020 16:00 |
Last Modified: | 20 Feb 2020 05:34 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/GROUP4.2019.8925675 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:157220 |