Wolde, S, Chauhan, D, Somvanshi, D et al. (5 more authors) (2019) Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy. Infrared Physics & Technology, 102. 103026. ISSN 1350-4495
Abstract
In this work, the activation energy obtained from the temperature dependent internal photoemission spectroscopy (TDIPS) and thermionic dark currents using GaAs/AlGaAs photodetectors are compared. Different barrier heights within the p-type GaAs/AlGaAs heterostructures are studied. The temperature dependent spectral response shows the red-shifting of the detector threshold wavelength for increasing temperature due to the decreasing band-offset. The activation energy extracted from Arrhenius plot of the dark current-voltage-temperature (I-V-T), and measured spectral response show the carrier activation energy increases with increasing Al mole fraction and decreases with increasing doping density. For Infrared detectors with ≤6.5 μm, the Arrhenius analysis yields the values of activation energy with less than 5% deviation from the actual or TDIPS fitting values. However, for detectors with longer threshold wavelengths (≫9.3 μm), activation energy extracted from the Arrhenius plot leads to energy values which deviate more than ~10% from the corresponding TDIPS values. The higher percentage deviation (≫10%) of activation energy determined by Arrhenius plot from the corresponding TDIPS values attribute to the temperature dependent Fermi distribution tailing effect and Fowler–Nordheim tunneling current.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2019, Elsevier B.V. All rights reserved. This is an author produced version of an article published in Infrared Physics & Technology. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Activation energy; Arrhenius plot; Dark current; Internal photoemission; Temperature-dependent internal photoemission spectroscopy |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 07 Feb 2020 12:01 |
Last Modified: | 30 Aug 2020 00:38 |
Status: | Published |
Publisher: | Elsevier |
Identification Number: | 10.1016/j.infrared.2019.103026 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:156614 |