Wang, Xiaochen, Hooper, Thomas N., Kumar, Amit et al. (9 more authors) (2017) Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride. CrystEngComm. pp. 285-294. ISSN 1466-8033
Abstract
We explore the use of stable, pre-formed, oligomeric aminoboranes as precursors for the chemical vapour deposition growth of few-layered hexagonal boron nitride (h-BN) films on Cu foils under atmospheric pressure conditions. Dimeric diborazane H3B·NH2BH2·NH3 (DAB), and trimeric triborazane H3B·(NH2BH2)2·NH3 (TAB), derivatives of ammonia borane, H3B·NH3 (AB), are compared with AB, a commonly used precursor for the CVD growth of h-BN. Both DAB and TAB show similar effectiveness to AB in growing h-BN few layered films. Using DAB as the precursor instead of AB leads to fully continuous h-BN films in a shorter period of time. Analysis of the surface of the h-BN films reveals that DAB and TAB precursors deposit more nanoparticles on the surface of the h-BN films during their CVD growth within the same time period as when using AB. The viability of these two new h-BN precursors (DAB and TAB), opens up a wider range of solid-state sources for growing wide band gap h-BN films using CVD techniques.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Chemistry (York) |
Depositing User: | Pure (York) |
Date Deposited: | 03 Jan 2020 14:10 |
Last Modified: | 16 Oct 2024 16:17 |
Published Version: | https://doi.org/10.1039/c6ce02006b |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1039/c6ce02006b |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:155095 |
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Description: Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride
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