Sala, E.M. orcid.org/0000-0001-8116-8830, Arikan, I.F., Bonato, L. et al. (5 more authors) (2018) MOVPE‐growth of InGaSb/AlP/GaP(001) quantum dots for nanoscale memory applications. physica status solidi (b), 255 (12). ISSN 0370-1972
Abstract
The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb‐flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb‐flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD‐luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p‐diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep‐level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross‐section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE‐grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD‐based nano‐memories.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 28 Nov 2019 11:39 |
Last Modified: | 28 Nov 2019 11:39 |
Status: | Published |
Publisher: | Wiley |
Refereed: | Yes |
Identification Number: | 10.1002/pssb.201800182 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:154004 |