Stracke, G., Sala, E.M. orcid.org/0000-0001-8116-8830, Selve, S. et al. (4 more authors) (2014) Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots. Applied Physics Letters, 104 (12). 123107. ISSN 0003-6951
Abstract
We present a study of self-assembled In0.5Ga0.5As quantum dots on GaP(001) surfaces linking growth parameters with structural, optical, and electronic properties. Quantum dot densities from 5.0 × 107 cm−2 to 1.5 × 1011 cm−2 are achieved. A ripening process during a growth interruption after In0.5Ga0.5As deposition is used to vary the quantum dot size. The main focus of this work lies on the nature of optical transitions which can be switched from low-efficient indirect to high-efficient direct ones through improved strain relief of the quantum dots by different cap layers.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2014 AIP Publishing LLC. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 28 Nov 2019 16:30 |
Last Modified: | 28 Nov 2019 19:32 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.4870087 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:154000 |