Petticrew, J. orcid.org/0000-0003-3424-2457, Dimler, S. orcid.org/0000-0001-9998-8562, Tan, C.H. et al. (1 more author) (2020) Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology, 38 (4). pp. 961-965. ISSN 0733-8724
Abstract
Avalanche photodiodes (APDs), and single photon avalanche diodes (SPADs), with InP avalanche regions and InGaAs absorption regions, are used for detecting weak infrared light at ~ 1.55 μm wavelength. These devices are often cooled to below room temperature during operation yet both validated simulation models and impact ionization coefficients that accurately describe the avalanche characteristics of InP are lacking in the temperature range of interest (200 K to room temperature). In this paper we present an accessible, validated temperature dependent simulation model for InP APDs/SPADs. The model is capable of simulating avalanche gain, excess noise, breakdown voltage, and impulse current at 150 - 300 K. Temperature dependent ionization coefficients in InP, which may be used with other APD/SPAD simulation models, are also presented. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef.data.c.4373006).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ |
Keywords: | Avalanche breakdown; avalanche photodiodes; impact ionization; indium phosphide |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 02 Dec 2019 11:52 |
Last Modified: | 25 Mar 2021 11:08 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/jlt.2019.2948072 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:152395 |