Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion

Ichinose, Tomohiro, Elphick, Kelvin, Hirohata, Atsufumi orcid.org/0000-0001-9107-2330 et al. (1 more author) (2019) Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion. ACS Applied Electronic Materials.

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Item Type: Article
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© 2019 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

Dates:
  • Published (online): 15 October 2019
  • Accepted: 28 September 2019
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 07 Oct 2019 14:00
Last Modified: 27 Nov 2024 00:36
Published Version: https://doi.org/10.1021/acsaelm.9b00431
Status: Published online
Refereed: Yes
Identification Number: 10.1021/acsaelm.9b00431
Open Archives Initiative ID (OAI ID):

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