Song, X., Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2019) Off-state operation of a three terminal ionic FET for logic-in-memory. IEEE Journal of the Electron Devices Society. ISSN 2168-6734
Abstract
We demonstrate a novel concept for low power compute-in-memory applications in a room temperature fabricated ZnO/Ta2O5 thin film transistor. By writing during the off-state, the device power consumption is reduced to nW despite a large L/W ratio. A thinner gate insulator thickness gives higher on/off ratio, nevertheless this reduces the retention time. The on/off ratio in the thicker oxide can be improved by asymmetric voltage pulses of higher magnitude in the off state without affecting power consumption. Benchmarked against other ReRAM devices, the device shows a competitive 8 nJ per transition, which allows a reduction in power consumption compared to a filamentary device. Such non-filamentary devices have closer similarity to biological synapses on account of slow operating speed.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2019 IEEE |
Keywords: | Tantalum oxide; zinc oxide; oxygen vacancies; memory TFTs and compute-in-memory |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENIAC 296131-1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 16 Oct 2019 11:35 |
Last Modified: | 16 Oct 2019 11:38 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/jeds.2019.2941076 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:151647 |