Hallman, Lauri, Ryvkin, Boris, Avrutin, Eugene orcid.org/0000-0001-5488-3222 et al. (4 more authors) (2019) High Power 1.5 μm Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Near p-cladding. IEEE Photonics Technology Letters. pp. 1635-1638. ISSN 1041-1135
Abstract
We report first experimental results on a high- power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 μm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 μm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details. |
Keywords: | Laser radar, optical pulse generation, semiconductor lasers. |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 26 Sep 2019 08:20 |
Last Modified: | 16 Oct 2024 16:04 |
Status: | Published |
Refereed: | Yes |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:151375 |
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