Walther, T. orcid.org/0000-0003-3571-6263, Cullis, A.G., Norris, D.J. et al. (1 more author) (2001) How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition. In: Cullis, A.G., (ed.) Microscopy of Semiconducting Materials 2001. 12th Conference on the Microscopy of Semiconducting Materials, 25-29 Mar 2001, Oxford, UK. Institute of Physics Conference Series (169). CRC Press , pp. 85-88.
Abstract
The structure of epitaxial InGaAs / GaAs layers during early stages of growth, just at the onset of islanding, is investigated ex-situ by atomic force microscopy and transmission electron microscopy. Nano-scale compositional measurements of uncapped islands by electron energy-loss imaging in cross-section allow the quantification of In gradients in the islanded layers. The In composition at the island apices is shown to be more than twice the nominal composition, while In depletion of the surrounding flat regions to a similar degree is observed. These lateral compositional inhomogeneities occur as soon as a sufficiently In enriched surface layer has been built up and are considered the driving force for the Stranski-Krastanow transition.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2001 IOP Publishing Ltd. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Aug 2019 14:54 |
Last Modified: | 08 Aug 2019 14:54 |
Status: | Published |
Publisher: | CRC Press |
Series Name: | Institute of Physics Conference Series |
Refereed: | Yes |
Identification Number: | 10.1201/9781351074629 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:149498 |