Walther, T. orcid.org/0000-0003-3571-6263 (2019) Measurement of diffusion and segregation in semiconductor quantum dots and quantum wells by transmission electron microscopy : a guide. Nanomaterials, 9 (6). 872.
Abstract
Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2019 The Author. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
Keywords: | interdiffusion; segregation; quantum dots; quantum wells; electron microscopy |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Aug 2019 11:54 |
Last Modified: | 14 Aug 2019 04:31 |
Status: | Published |
Publisher: | MDPI AG |
Refereed: | Yes |
Identification Number: | 10.3390/nano9060872 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:149497 |