Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold, Stefan, Zintler, Alexander, Eilhardt, Robert et al. (8 more authors) (2019) Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials. 1900484.

Abstract

Metadata

Item Type: Article
Authors/Creators:
  • Petzold, Stefan
  • Zintler, Alexander
  • Eilhardt, Robert
  • Piros, Eszter
  • Kaiser, Nico
  • Sharath, Sankaramangalam
  • Vogel, Tobias
  • Major, Márton
  • McKenna, Keith Patrick ORCID logo https://orcid.org/0000-0003-0975-3626
  • Molina-Luna, Leopoldo
  • Alff, Lambert
Copyright, Publisher and Additional Information:

© Authors, 2019

Keywords: grain boundary engineering,hafnium oxide,resistive switching memory,texture transfer,transmission electron microscopy
Dates:
  • Published (online): 5 August 2019
  • Accepted: 17 July 2019
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
Funding Information:
Funder
Grant number
EPSRC
EP/P023843/1
Depositing User: Pure (York)
Date Deposited: 31 Jul 2019 11:50
Last Modified: 08 Feb 2025 00:34
Published Version: https://doi.org/10.1002/aelm.201900484
Status: Published online
Refereed: Yes
Identification Number: 10.1002/aelm.201900484
Related URLs:
Open Archives Initiative ID (OAI ID):

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Description: Petzold_et_al-2019-Advanced_Electronic_Materials

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