Petzold, Stefan, Zintler, Alexander, Eilhardt, Robert et al. (8 more authors) (2019) Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials. 1900484.
Abstract
A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 (Formula presented.)) is grown onto a c-cut Al 2O 3-substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in-plane rotated m-HfO 2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming-free resistive random access memory devices. Combining X-ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High-resolution STEM reveals low-energy grain boundaries with facing ((Formula presented.)) and ((Formula presented.) 21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra- and device-to-device variation in grain boundary engineered hafnium-oxide-based random access memory devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © Authors, 2019 |
Keywords: | grain boundary engineering,hafnium oxide,resistive switching memory,texture transfer,transmission electron microscopy |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Funding Information: | Funder Grant number EPSRC EP/P023843/1 |
Depositing User: | Pure (York) |
Date Deposited: | 31 Jul 2019 11:50 |
Last Modified: | 08 Feb 2025 00:34 |
Published Version: | https://doi.org/10.1002/aelm.201900484 |
Status: | Published online |
Refereed: | Yes |
Identification Number: | 10.1002/aelm.201900484 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:149221 |
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