A p-channel GaN heterostructure tunnel FET with high ON/OFF current ratio

A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper. The method relies on polarization charge induced in semiconductors, such as group III nitrides, to enhance the electric field across the junction and facilitate unidirectional tunneling based on the polarity of the applied gate bias. This also enables enhanced control over the tunneling distance, reducing it significantly in comparison to a conventional TFET. The proposed p-channel device implemented in a novel vertical GaN nanowire geometry facilitates a reduction of footprint while still maintaining comparable performance to that of conventional E-mode p-channel devices in GaN. This opens up possibilities for E-mode p-channel GaN devices.