Tsukahara, Makoto, Yamada, Michihiro, Naito, Takahiro et al. (4 more authors) (2019) Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts. Applied Physics Express. 033002. ISSN 1882-0786
Abstract
Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | ©2019 The Japan Society of Applied Physics |
Dates: |
|
Institution: | The University of York |
Academic Units: | The University of York > York Institute for Materials Research The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 17 Apr 2019 15:30 |
Last Modified: | 16 Oct 2024 15:37 |
Published Version: | https://doi.org/10.7567/1882-0786/ab0252 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.7567/1882-0786/ab0252 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:145140 |
Download
Filename: Tsukahara_2019_Appl._Phys._Express_12_033002.pdf
Description: Tsukahara_2019_Appl._Phys._Express_12_033002
Licence: CC-BY 2.5