Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity

Lim, L., Tan, C.H., Ng, J. et al. (2 more authors) (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37 (10). pp. 2375-2379. ISSN 0733-8724

Abstract

Metadata

Item Type: Article
Authors/Creators:
  • Lim, L.
  • Tan, C.H.
  • Ng, J.
  • Petticrew, J.
  • Krysa, A.
Copyright, Publisher and Additional Information:

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.

Keywords: Avalanche photodiodes; Indium Arsenide; infrared detectors
Dates:
  • Published: 15 May 2019
  • Published (online): 15 March 2019
  • Accepted: 11 March 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Mar 2019 10:17
Last Modified: 15 Mar 2020 01:38
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JLT.2019.2905535
Open Archives Initiative ID (OAI ID):

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