Lim, L., Tan, C.H., Ng, J. et al. (2 more authors) (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37 (10). pp. 2375-2379. ISSN 0733-8724
Abstract
Indium Arsenide (InAs) infrared photodiodes provide high quantum efficiency in the wavelength range of 1.0-3.0 μm. Planar diode configuration has been adopted to reduce surface leakage. In this work, new fabrication procedures for planar InAs avalanche photodiodes (APDs) are reported. Beryllium (Be) ions were implanted into InAs at a relatively low energy of 34 keV. Effects of duration of post implant annealing on the electrical characteristics of InAs APDs were investigated. It was found that a combination of post implant annealing at 500 °C for 15 min and a shallow surface etch produces planar APDs with good characteristics (room temperature dark current density of 0.52 A/cm 2 at -0.2 V and external quantum efficiency of 51% at 1520 nm at -0.3 V). These represent a 3 times reduction in dark current and 1.4 times increase in responsivity, compared to earlier Be-implanted planar InAs APDs. The APDs' avalanche gain characteristics remain similar to those from earlier reports, with a gain of 4 at a relatively low operating bias of 5 V. This suggests the potential of integrating InAs APDs with low voltage readout integrated circuits (ROIC) for development of infrared imaging arrays. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef.data.6955037).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | Avalanche photodiodes; Indium Arsenide; infrared detectors |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Mar 2019 10:17 |
Last Modified: | 15 Mar 2020 01:38 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/JLT.2019.2905535 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:143676 |