A high electron mobility phonotransistor

Abstract

Acoustoelectric devices convert acoustic energy to electrical energy and vice versa. Devices working at much higher acoustic frequencies than those currently available have potential scientific and technological applications, for example, as detectors in phononics experiments and as transducers in bulk acoustic wave filters at terahertz (THz) frequencies. Here we demonstrated an active acoustoelectronic device based on a GaAs heterostructure: an acoustically gated transistor or phonotransistor. Instead of being controlled in the conventional manner by an electrical signal applied to a metallic or semiconductor gate as in a high electron mobility transistor (HEMT), the drain-source current was controlled by a bulk sub-THz acoustic wave passing through the channel in a direction perpendicular to the current flow.

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Item Type:	Article
Authors/Creators:	Poyser, CL Li, LH https://orcid.org/0000-0003-4998-7259 Campion, RP Akimov, AV Linfield, EH Davies, AG https://orcid.org/0000-0002-1987-4846 Cunningham, JE https://orcid.org/0000-0002-1805-9743 Kent, AJ
Copyright, Publisher and Additional Information:	© The Author(s) 2018. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Dates:	Accepted: 24 August 2018 Published: 28 September 2018
Institution:	The University of Leeds
Academic Units:	The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Funding Information:	Funder Grant number EPSRC (Engineering and Physical Sciences Research Council) EP/M01598X/1 EPSRC (Engineering and Physical Sciences Research Council) EP/P021859/1
Depositing User:	Symplectic Publications
Date Deposited:	08 Oct 2018 10:36
Last Modified:	30 Nov 2020 15:56
Status:	Published
Publisher:	Nature Research
Identification Number:	10.1038/s42005-018-0059-7
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:136787

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A high electron mobility phonotransistor

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