Analysis of Barrier Parameters on the Extended Threshold Wavelength of Infrared Detectors

Abstract

The threshold wavelength (λt) of spectral photoresponse of any semiconductor photodetector is determined by the minimum energy gap (Δ=1.24/λt) of the material, or the interfacial energy gap of the heterostructure. It was shown before that the threshold limit can be extended beyond λt to obtain an extended threshold wavelength λeff(λeff≫λt) in detectors with a barrier energy offset (δEv) and a gradient. Here, in this letter, we analyze the effect of barrier parameters such as δEv and gradient on the extended threshold wavelength of infrared detectors for the temperature range up to 50 K.

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Item Type:	Article
Authors/Creators:	Somvanshi, D Chauhan, D Perera, AGU Li, L https://orcid.org/0000-0003-4998-7259 Chen, L Linfield, EH
Copyright, Publisher and Additional Information:	© 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. This is an author produced version of a paper published in IEEE Photonics Technology Letters. Uploaded in accordance with the publisher's self-archiving policy.
Keywords:	Infrared photodetectors; threshold wavelength; heterojunction
Dates:	Published: 15 September 2018 Published (online): 27 July 2018 Accepted: 23 July 2018
Institution:	The University of Leeds
Depositing User:	Symplectic Publications
Date Deposited:	19 Sep 2018 13:26
Last Modified:	20 Sep 2018 07:38
Status:	Published
Publisher:	Institute of Electrical and Electronics Engineers
Identification Number:	10.1109/LPT.2018.2860631
Related URLs:	Author
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:135860

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Analysis of Barrier Parameters on the Extended Threshold Wavelength of Infrared Detectors

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