Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures

Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2016) Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures. In: Book of abstracts UK semiconductors. UK Semiconductors 2016, 06-07 Jul 2016, Sheffield, UK.

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Item Type: Proceedings Paper
Authors/Creators:
Copyright, Publisher and Additional Information:

© UK Semiconductors 2016
Dates:
  • Published: 5 July 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ENIAC
296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 15 Jun 2018 10:09
Last Modified: 19 Dec 2022 13:49
Status: Published
Refereed: Yes
Open Archives Initiative ID (OAI ID):

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