De Souza, M.M. orcid.org/0000-0002-7804-7154 and Pillai, P. (2016) The behaviour and peculiarities of ZnO/Tantalum oxide memristor system. In: Book of abstracts TCM 2016. 6th International Conference on Transparent Conductive materials, 09-13 Oct 2016, Chania, Crete, Greece. , p. 142.
Abstract
Neuromorphic computers have architectures that can mimic a human brain with billions of neurons and their synapses to store, retrieve and process information using future chip technology. One of the driving forces of neuromorphic computing is the requirement for low energy consumption, as present day chips still consume tens if not hundreds of watts for a relative small fraction of tasks capable in a human brain. Neurons are either digital or analogue and can work asynchronously. However, the power performance and density of synapses is of critical importance as they far exceed neurons in number. Two terminal memristor devices such as (Resistive Ram RERAM, Conductive Bridge Memory (CB RAM), Phase Change Memory (PCM) and ferroelectric Memory (FeRAM) have been shown to have excellent properties for non-volatile RAM applications that mimic the properties of synapses. [1-4]. In biological systems, signal transmission and learning process occurs concurrently and the learning process is via a change in synaptic weight. The present two terminal synaptic devices that function as a connecting element between a pre and post neuron terminals, have the limitation that signal transmission and learning functions cannot be carried out simultaneously. The learning function in two terminal devices are carried out by feeding the signal from post neuron to the synaptic device terminal to modulate the synaptic weight while the synaptic transmission is inhibited. However, three terminal synaptic devices are able to realise both signal transmission and learning functions, where signal transmission is carried via the channel medium and synaptic weights are modulated independently via the gate terminal. Of the three terminal based synaptic devices, Ferroelectric FETs (FeFETs) and ion gated FETs/TFTs are the most discussed [4-9]. Oxide based memristors in recent years have reported properties of signal transmission and self-learning: at the heart of their mechanism lies a motion of positively charged oxygen vacancies that have been widely examined in the context of stability and performance of Transparent oxide thin film transistors (TFTs). In this talk, we will present the latest developments that summarise and compare the performance of a ZnO/Ta2O5 based memristor “system” with other materials reported to date. The synaptic functions are emulated at a low programming voltage of 200 mV, an order of magnitude smaller than in conventional RERAM. The synaptic behaviour of our transistors is found to be independent of environmental factors. By the application of relatively higher pre-synaptic spike signal at the gate terminal, a long term memory retention lasting up to several (>3) hours is observed. We will present data analysis that explains the relaxation kinetics of the oxygen vacancies in these samples and draw conclusions on possible mechanisms related to observed synaptic and transistor characteristics.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © TCM2016 |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENIAC 296131-1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Jun 2018 09:02 |
Last Modified: | 19 Dec 2022 13:49 |
Published Version: | http://tcm2016.org/tcm2016abstractbook/files/asset... |
Status: | Published |
Refereed: | Yes |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:131987 |