Balades, N., Sales, D.L., Herrera, M. et al. (4 more authors) (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM. Nanoscale Research Letters, 13. 125. ISSN 1931-7573
Abstract
The Bi content in GaAs/GaAs1 − xBix/GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar defect-free layers and a non-homogeneous Bi distribution at the interfaces and within the GaAsBi layer. At high magnification, the qHAADF analysis confirmed the inhomogeneous distribution and Bi segregation at the GaAsBi/GaAs interface at low Bi flux and distorted dumbbell shape in areas with higher Bi content. At higher Bi flux, the size of the Bi gathering increases leading to roughly equiaxial Bi-rich particles faceted along zinc blende {111} and uniformly dispersed around the matrix and interfaces. FFT analysis checks the coexistence of two phases in some clusters: a rhombohedral pure Bi (rh-Bi) one surrounded by a zinc blende GaAs1 − xBix matrix. Clusters may be affecting to the local lattice relaxation and leading to a partially relaxed GaAsBi/GaAs system, in good agreement with XRD analysis.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © The Author(s). 2018 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
Keywords: | GaAsBi; Ac-HAADF-STEM; Bi-clusters |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ROYAL ACADEMY OF ENGINEERING (THE) RF/1516/15/43 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 14 May 2018 15:44 |
Last Modified: | 15 May 2018 06:55 |
Published Version: | https://doi.org/10.1186/s11671-018-2530-5 |
Status: | Published |
Publisher: | SpringerOpen |
Refereed: | Yes |
Identification Number: | 10.1186/s11671-018-2530-5 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:130799 |
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