Taskin, AA, Yang, F, Sasaki, S orcid.org/0000-0002-8915-6735 et al. (2 more authors) (2014) Topological surface transport in epitaxial SnTe thin films grown on Bi₂Te₃. Physical Review B, 89 (12). 121302. ISSN 1098-0121
Abstract
The topological crystalline insulator SnTe has been grown epitaxially on a Bi₂Te₃ buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov–de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2014 American Physical Society. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds) > Condensed Matter (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 15 Jun 2018 14:22 |
Last Modified: | 11 Apr 2021 04:44 |
Status: | Published |
Publisher: | American Physical Society |
Identification Number: | 10.1103/PhysRevB.89.121302 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:130694 |