Ker, P.J., Marshall, A.R.J., Tan, C.H. orcid.org/0000-0002-8900-9452 et al. (1 more author) (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. In: Photonics (ICP), 2016 IEEE 6th International Conference on. 2016 IEEE 6th International Conference on Photonics (ICP), 14-16 Mar 2016, Sarawak, Malaysia. IEEE
Abstract
The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | Avalanche photodiodes; InAs; infrared imaging; leakage current; surface passivation |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 May 2018 13:18 |
Last Modified: | 19 Dec 2022 13:49 |
Published Version: | https://doi.org/10.1109/ICP.2016.7510018 |
Status: | Published |
Publisher: | IEEE |
Refereed: | Yes |
Identification Number: | 10.1109/ICP.2016.7510018 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:130488 |