Jones, T.W., Osherov, A., Alsari, M. et al. (17 more authors) (Submitted: 2018) Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites. arXiv. (Submitted)
Abstract
Halide perovskites are promising semiconductors for optoelectronics, yet thin films show substantial microscale heterogeneity. Understanding the origins of these variations is essential for mitigating parasitic losses such as non-radiative decay. Here, we probe the structural and chemical origins of the heterogeneity by utilizing scanning X-ray diffraction beamlines at two different synchrotrons combined with high-resolution transmission electron microscopy to spatially characterize the crystallographic properties of individual micrometer-sized perovskite grains in high-quality films. We reveal new levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). By directly correlating these properties with their corresponding local time-resolved photoluminescence properties, we find that regions showing the greatest luminescence losses correspond to strained regions, which arise from enhanced defect concentrations. Our work reveals remarkably complex heterogeneity across multiple length scales, shedding new light on the defect tolerance of perovskites.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 The Author(s). For reuse permissions, please contact the Author(s). |
Keywords: | Materials Science (cond-mat.mtrl-sci) |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 04 May 2018 14:54 |
Last Modified: | 04 May 2018 14:54 |
Published Version: | https://arxiv.org/abs/1803.01192 |
Status: | Submitted |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:130434 |