Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2018) Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN. Applied Physics Letters, 112 (15). 153503. ISSN 0003-6951
Abstract
Introduction of positive polarization charge by utilising an AlGaN cap layer between the gate oxide and the channel is one of the promising techniques to deplete a two-dimensional hole gas (2DHG) to achieve an E-mode p-channel GaN MOSHFET. The results from TCAD simulations indicate that the off-state leakage increases by orders of magnitude for channel layers thicker than 20 nm in this structure. Biasing the two-dimensional electron gas beneath the 2DHG helps alleviate this limitation at the cost of reducing on-current. Scaling the access regions and combining the two techniques allow maximum benefit in terms of on-state current, negative threshold voltage, and the on/off current ratio.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 AIP Publishing. This is an author produced version of a paper subsequently published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENIAC 296131-1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Apr 2018 10:55 |
Last Modified: | 11 Apr 2019 00:43 |
Published Version: | https://doi.org/10.1063/1.5021306 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.5021306 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:129546 |