Norris, D.J. and Walther, T. orcid.org/0000-0003-3571-6263 (2018) Stranski-Krastanow growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory. Materials Science and Technology, 34 (13). pp. 1539-1548. ISSN 0267-0836
Abstract
We performed transmission electron microscopy of SiGe/Si(001) and Ge/Si(001) samples that undergo the Stranski–Krastanov transition from flat layer to island growth. With the help of quantitative X-ray maps of those layers, we have determined the total amount of deposited germanium at which islanding commences. The maximum amount of Ge buried in a flat layer amounts to 2.3 monolayers. We show by modelling that it is the strain due to the total amount of Ge atoms deposited that drives the islanding process. At 600°C [400°C], 1.62 [1.74] monolayers of Ge are expected from simulations to segregate towards the surface, the strain of which is sufficient to trigger plastic relaxation by islanding, in agreement with our electron microscope observations.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This is an Accepted Manuscript of an article published by Taylor & Francis in Materials Science and Technology on 02 Apr 2018, available online: https://doi.org/10.1080/02670836.2018.1455013. |
Keywords: | Stranski–Krastanov; islanding; SiGe; TEM; segregation; three-state exchange model |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/F033893/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Apr 2018 11:23 |
Last Modified: | 17 Nov 2020 08:04 |
Status: | Published |
Publisher: | Taylor & Francis |
Refereed: | Yes |
Identification Number: | 10.1080/02670836.2018.1455013 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:129400 |