Nedelkoski, Z, Kepaptsoglou, D, Ghasemi, A et al. (7 more authors) (2016) Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si–Co–Si. Journal of Physics: Condensed Matter, 28 (39). 395003. ISSN 0953-8984
Abstract
By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co₂ (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si–Co–Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi₂ nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | half-metals, spintronics, Heusler alloys, spin-injection |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 06 Apr 2018 15:43 |
Last Modified: | 06 Apr 2018 15:43 |
Status: | Published |
Publisher: | IOP Publishing |
Identification Number: | 10.1088/0953-8984/28/39/395003 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:129334 |
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