Poluri, N. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2018) Investigation of the effect of weak non-linearities on P1dB and efficiency of class B/J/J* amplifiers. IEEE Transactions on Circuits and Systems II: Express Briefs, 65 (9). pp. 1159-1163. ISSN 1549-7747
Abstract
The variation of phase of the current through the non-linear intrinsic capacitances of a high-power RF device caused by the variation of the phase in the continuum of drain voltage waveforms in Class B/J/J* leads to a reduction of intrinsic drain current when moving from class B to class J* while the drain current increases from class B to class J. Consequently, a subset of voltage waveforms of the class B/J/J* continuum can be used to design amplifiers with higher P1dB, and efficiency at P1dB than in Class B. A simple choice of this subset is demonstrated with a 2.6GHz Class B/J/J* amplifier, achieving a P1dB of 38.1dBm and PAE at P1dB of 54.7%, the highest output power and efficiency at P1dB amongst narrowband linear amplifiers using the CGH40010 reported to date, at a comparable peak PAE of 72%.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | Class B/J/J* continuum; non-linear capacitances; power amplifier; GaN HEMT |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Apr 2018 15:12 |
Last Modified: | 24 Oct 2018 11:10 |
Published Version: | https://doi.org/10.1109/TCSII.2018.2810944 |
Status: | Published |
Publisher: | IEEE |
Refereed: | Yes |
Identification Number: | 10.1109/TCSII.2018.2810944 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:129111 |