Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2018) Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65 (4). pp. 1440-1446. ISSN 0018-9383
Abstract
3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 IEEE. This is an author produced version of a paper subsequently published in IEEE Transactions on Electron Devices. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | IGBT; Clustered IGBT; Vce(sat) -Eoff trade-of; power semiconductor device; scaling rule; short circuit capability; self-clamping feature |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 16 Feb 2018 15:38 |
Last Modified: | 14 Jul 2020 08:20 |
Published Version: | https://doi.org/10.1109/TED.2018.2807318 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/TED.2018.2807318 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:127537 |