Pinel, L.L.G. orcid.org/0000-0001-8603-5631, Dimler, S.J., Zhou, X. et al. (4 more authors) (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 26 (3). pp. 3568-3576.
Abstract
Avalanche photodiodes (APDs) with thin avalanche regions have shown low excess noise characteristics and high gain-bandwidth products, so they are suited for long-haul optical communications. In this work, we investigated how carrier injection profile affects the avalanche gain and excess noise factors of Al0.85Ga0.15As0.56Sb0.44 (lattice-matched to InP substrates) p-i-n and n-i-p diodes with total depletion widths of 145-240 nm. Different carrier injection profiles were achieved by using light with wavelengths of 420, 543 and 633nm. For p-i-n diodes, shorter wavelength light produces higher avalanche gains for a given reverse bias and lower excess noise factors at a given gain, compared to longer wavelength light. Thus, using 420 nm light on the p-i-n diodes, corresponding to pure electron injection conditions, gave the highest gain and lowest excess noise. In n-i-p diodes, pure hole injection yields significantly lower gain and higher excess noise, compared to mixed carrier injection. These show that the electron ionization coefficient, α, is higher than the hole ionization coefficient, β. Using pure electron injection, excess noise factor characteristics with effective ionization ratios, keff, of 0.08-0.1 were obtained. This is significantly lower than those of InP and In0.52Al0.48As, the commonly used avalanche materials combined with In0.53Ga0.47As absorber. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef. DATA: 5787318).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 Optics Express. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/K001469/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Feb 2018 13:50 |
Last Modified: | 21 Jul 2020 13:37 |
Published Version: | https://doi.org/10.1364/OE.26.003568 |
Status: | Published |
Publisher: | Optical Society of America |
Refereed: | Yes |
Identification Number: | 10.1364/OE.26.003568 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:127282 |