Nguyen, N.B., Nielsen, M.P., Lafone, L. et al. (3 more authors) (2017) Hybrid gap plasmon GaAs nanolasers. Applied Physics Letters, 111 (26). 261107. ISSN 0003-6951
Abstract
Compact semiconductor lasers with sub-wavelength-scale dimensions rely heavily on materials with low surface recombination due to the large surface area to volume ratios of their nano-cavities. Furthermore, the reliance on semiconductor nanostructures has led to predominantly bottom-up fabrication approaches, which has hindered scalable and practical applications. In this letter, we present lithographically constructed hybrid gap plasmon nanolasers using the gain of bulk GaAs operating at room temperature. The nanolasers are built on GaAs suspended membranes with InGaP passivation layers. Laser resonators are defined only by patterning gold on top of these GaAs membranes, thus eliminating the need to etch the semiconductor for optical confinement, which would intro duce additional surface recombination. An analysis of the modal gain and losses in these devices suggests that threshold carrier densities in the range of 4-5×1018 cm -3 are necessary - potentially achievable with current densities as low as 6-8 kA cm-2.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 AIP Publishing. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 24 Jan 2018 11:54 |
Last Modified: | 29 Dec 2018 01:38 |
Published Version: | https://doi.org/10.1063/1.5008320 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.5008320 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:126513 |