Heusler Alloys with bcc Tungsten Seed Layers for GMR Junctions

We demonstrate that polycrystalline Co 2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co 2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.